Lifetime spectroscopy: a method of defect characterization in silicon for photovoltaic applications
(eBook)
Author:
Series:
Published:
Berlin ; New York : Springer, ©2005.
Format:
eBook
ISBN:
9783540279228, 3540279229, 9781615833818, 1615833811, 9783540253037, 3540253033, 6610308446, 9786610308446
Content Description:
1 online resource (xxvi, 489 pages) : illustrations (some color)
Status:
Available Online
Description
Annotation
Copies
CCU Electronic Resources
Subjects
OCLC Fast Subjects
Citations
APA Citation (style guide)
Rein, S. (2005). Lifetime spectroscopy: a method of defect characterization in silicon for photovoltaic applications. Berlin ; New York, Springer.
Chicago / Turabian - Author Date Citation (style guide)Rein, S. 2005. Lifetime Spectroscopy: A Method of Defect Characterization in Silicon for Photovoltaic Applications. Berlin ; New York, Springer.
Chicago / Turabian - Humanities Citation (style guide)Rein, S, Lifetime Spectroscopy: A Method of Defect Characterization in Silicon for Photovoltaic Applications. Berlin ; New York, Springer, 2005.
MLA Citation (style guide)Rein, S. Lifetime Spectroscopy: A Method of Defect Characterization in Silicon for Photovoltaic Applications. Berlin ; New York, Springer, 2005.
Note! Citation formats are based on standards as of July 2022. Citations contain only title, author, edition, publisher, and year published. Citations should be used as a guideline and should be double checked for accuracy.
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Language:
English
UPC:
10.1007/3-540-27922-9.
Notes
Bibliography
Includes bibliographical references and index.
Restrictions on Access
University staff and students only. Requires University Computer Account login off-campus.
Description
Annotation,Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.
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Grouped Work ID:
8061b150-1b2f-dfd3-9376-3d1f5849c433
Record Information
| Last Sierra Extract Time | Apr 05, 2024 08:32:03 AM |
|---|---|
| Last File Modification Time | Apr 05, 2024 08:33:41 AM |
| Last Grouped Work Modification Time | Apr 05, 2024 08:32:16 AM |
MARC Record
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| 245 | 1 | 0 | |a Lifetime spectroscopy :|b a method of defect characterization in silicon for photovoltaic applications /|c S. Rein. |
| 260 | |a Berlin ;|a New York :|b Springer,|c ©2005. | ||
| 300 | |a 1 online resource (xxvi, 489 pages) :|b illustrations (some color) | ||
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| 490 | 1 | |a Springer series in materials science,|x 0933-033X ;|v 85 | |
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a Theory of carrier lifetime in silicon -- Lifetime measurement techniques -- Theory of lifetime spectroscopy -- Defect characterization on intentionally metal-contaminated silicon samples -- The metastable defect in boron-doped Czochralski silicon -- Summary and further work -- Zusammenfassung und Ausblick. | |
| 506 | |a University staff and students only. Requires University Computer Account login off-campus. | ||
| 520 | 8 | |a Annotation|b Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy. | |
| 588 | 0 | |a Print version record. | |
| 650 | 0 | |a Silicon crystals|x Defects. | |
| 650 | 0 | |a Silicon crystals|x Spectra. | |
| 650 | 0 | |a Semiconductors|x Defects. | |
| 650 | 6 | |a Silicium cristallisé|x Défauts. | |
| 650 | 6 | |a Silicium cristallisé|x Spectre. | |
| 650 | 6 | |a Semi-conducteurs|x Défauts. | |
| 650 | 0 | 7 | |a Semoconductors|x Defects.|2 cct |
| 650 | 0 | 7 | |a Silicon crystals|x Defects.|2 cct |
| 650 | 0 | 7 | |a Silicon crystals|x Spectra.|2 cct |
| 650 | 7 | |a Physique.|2 eclas | |
| 650 | 7 | |a Semiconductors|x Defects|2 fast | |
| 650 | 7 | |a Silicon crystals|x Defects|2 fast | |
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